Search results for "ATOMIC FORCE MICROSCOPE"

showing 2 items of 2 documents

Non-destructive technique to detect local buried defects in metal sample by scanning microwave microscopy

2012

International audience; Based on the skin effect, our recent developments using scanning microwave microscopy lead to propose a non-destructive method to detect located buried defect in metal samples like stainless steel. A 3D tomography is possible by taking advantage of microwave measurement, using a vector network analyzer in bandwidth frequencies, and the nanometer resolution positioning capabilities with atomic force microscopy. At each used frequency, an incident electromagnetic wave is sent to the sample and the reflected wave gives information on a specific depth layer in the material. With diagnostic tools of nanotechnologies (SEM. AFM, etc.), different stainless steel samples (fro…

Materials scienceAnalytical chemistry02 engineering and technology01 natural sciencesElectromagnetic radiationMetalNon destructive0103 physical sciencesMicroscopyElectrical and Electronic EngineeringATOMIC FORCE MICROSCOPE010306 general physicsInstrumentationbusiness.industryMetals and Alloys021001 nanoscience & nanotechnologyCondensed Matter PhysicsSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialsvisual_artvisual_art.visual_art_mediumOptoelectronicsSkin effectNanometreTomography0210 nano-technologybusinessMicrowaveSensors and Actuators A: Physical
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Changes in surface stress, morphology and chemical composition of silica and silicon nitride surfaces during the etching by gaseous HF acid

2007

International audience; HF acid attack of SiO2 and Si3N4 substrates is analyzed to improve the sensitivity of a sensor based on inicrocantilever. Ex situ analysis of the etching using XPS, SIMS and AFM show significant changes in the anisotropy and the rate of the etching of the oxides on SiO2 and Si3N4 surface. Those differences influence the kinetic evolution of the plastic bending deflection of the cantilever coated with SiO2 and Si3N4 layer, respectively. The linear dependence between the HF concentration and the Si3N4 cantilever bending corresponds to a deep attack of the layer whereas the nonlinear behavior observed for SiO2 layer can be explained by a combination of deep and lateral …

atomic force microscope (AFM)[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicssiliconX-ray photoelectron spectroscopy (XPS)HYDROGEN-FLUORIDECORROSIONRESONANCEAQUEOUS HYDROFLUORIC-ACIDhydrofluoric acid (HF)sensorCERAMICSMICROCANTILEVERSsecondaryEOLEOLion mass spectroscopy (SIMS)[ SPI.NANO ] Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsSI(111) SURFACESCANTILEVERS[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicscantileverGAS SENSORS
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